Articles Tagged with ''GaN''

 M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, will showcase the industry’s broadest GaN product portfolio along with a live GaN on Si demo at EuMW 2014 in Rome, Italy, at booth 131. 

 M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, announced a new GaN on SiC HEMT pulsed power transistor for civilian and military radar pulsed applications. 

 Infineon Technologies AG  and International Rectifier Corp. have signed a definitive agreement under which Infineon will acquire International Rectifier for $40 per share in an all-cash transaction valued at approximately $3 billion.  

 Cree, Inc. has made seven new GaN HEMT die available through distribution via Mouser. Manufactured on silicon carbide (SiC) substrates using a either 0.4 or 0.25 μm gate length fabrication process, the gallium nitride (GaN) high electron mobility transistor (HEMT) die exhibit superior performance properties compared to silicon (Si) or gallium arsenide (GaAs) die, including: higher breakdown voltage, higher saturated electron drift velocity, higher thermal conductivity, and higher efficiency. 

Plextek RF Integrationhas been selected by Cree as a preferred design resource to provide third party design services to Cree’s European foundry customers.

Richardson RFPD Inc.has announced its Gold-level sponsorship of the Electronic Design Innovation Conference (EDI Con 2014) to be held at the Beijing International Convention Center, Beijing, China, April 8-10, 2014. As a gold sponsor, Richardson RFPD will organize a special expert forum discussing the state-of-the-art in Gallium Nitride (GaN) semiconductor technology targeting high-power RF and microwave applications. As the sponsor, Richardson RFPD has assembled a panel of experts from leading suppliers of discrete transistors and integrated circuits based on GaN technology.

Fujitsu Semiconductor Europe (FSEU) announced the release of MB51T008A, a silicon substrate-based, GaN power device that features a breakdown voltage of 150 V.

Diamond Microwave has announced the launch of ultra-compact high power solid state power amplifiers in X-Band and Ku-Band.

Link Microtek has been appointed as a representative for United Monolithic Semiconductors in the UK and Ireland.

Richardson RFPD Inc. announces its attendance and participation at the 2012 IEEE International Microwave Symposium (IMS). IMS, along with the RFIC symposium and the ARFTG conference, is part of Microwave Week, the largest gathering of radio frequency (RF) and microwave professionals, and the most important forum for the latest and most advanced research in these fields.