Articles Tagged with ''GaN''

Raytheon to Advance Gallium Nitride Technology

The U.S. Air Force Research Laboratory and the Office of the Secretary of Defense have awarded Raytheon Co. a $14.9 million contract to further enhance its process for producing gallium nitride-based semiconductors. The new agreement aims to increase the performance, yield and reliability of Raytheon GaN-based, wideband, monolithic, microwave-integrated circuits and circulator components.


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Wolfspeed releases highest power L-Band radar GaN HEMT

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, will release the highest power 50V GaN HEMT demonstrated to date — its 900W CGHV14800 GaN HEMT for L-Band radar applications — to market at European Microwave Week 2016, which will take place in London, October 3–7.


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