Articles Tagged with ''GaN''

MACOM expands GaN portfolio with new wideband power transistor at EuMW 2015

M/A-COM Technology Solutions Inc., a leading supplier of high performance analog RF, microwave and optical semiconductor products, announced the new NPT2024, a wideband transistor optimized for DC to 2.7 GHz operation using MACOM’s proprietary gallium nitride on silicon (GaN on Si) process is sampling today. The NPT2024 supports CW, pulsed and linear operation, boasting output levels up to 200 W. 


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Qorvo set to double GaN capacity

MWJ talks one-on-one with James Klein, Qorvo's president of infrastructure and defense products

Qorvo Inc., a leading provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, announced it has successfully scaled its proprietary QGaN25 gallium nitride (GaN) on silicon carbide (SiC) process to produce monolithic microwave integrated circuits (MMICs) on six-inch wafers. The transition from 4-inch to 6-inch wafers is expected to approximately double Qorvo's GaN on SiC manufacturing capacity and favorably impact manufacturing costs – significantly accelerating the affordable manufacture of RF devices.


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MACOM announces fourth generation GaN technology

Next-generation GaN on Silicon technology rivals performance of GaN on Silicon Carbide, offering greater than 70% efficiency and 19dB Gain at a cost structure below incumbent LDMOS technology

M/A-COM Technology Solutions Holdings, Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave, millimeterwave and photonic semiconductor products, announced its fourth generation of Gallium Nitride on Silicon (GaN on Si) technology.


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