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Developed primarily for satellite communication terminals, four new MMICs from Nxbeam provide customers with exceptional output power, gain and efficiency performance in an ultra-small form factor.
BeRex has launched a family of power GaN FETs offering improved current efficiency with excellent gain and power performance, designed for C-, X-, Ku- and K-Band amplifiers.
UMS announced that its GH25-10 MMIC GaN HEMT technology has been successfully space evaluated and is now part of the European Preferred Part list supported by ESA.
OMMIC introduces Europe’s first 6-inch GaN wafer production line, multiplying production capacity by 4x and enabling the mass production for the 5G and satellite communication markets.
Thales will deliver 14, GaN-based, CWI transmitters that will be integrated into the Evolved Sea Sparrow Missile (ESSM) fire control systems on-board Royal Danish Navy vessels.
Millitech, a microwave brand of Smiths Interconnect, announced the release of a new gallium nitride (GaN) based power amplifiers with exceptional output power and power-added efficiency (PAE) at E-Band and W-Band. Offering up to 2.5 W of output power and up to 20% PAE, typical gain figures range from 15 to 40 dB.
Thales will deliver 14, GaN-based, CWI transmitters that will be integrated into the Evolved Sea Sparrow Missile (ESSM) fire control systems on-board Royal Danish Navy vessels.
Millitech, a microwave brand of Smiths Interconnect, announced the release of a new gallium nitride (GaN) based power amplifiers with exceptional output power and power-added efficiency (PAE) at E-Band and W-Band. Offering up to 2.5 W of output power and up to 20% PAE, typical gain figures range from 15 to 40 dB.