ARTICLES

SiC MOSFET Driver Reference Design: MSCSICMDD/REF1

MICROSEMI_MSCSICMDD_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for a SiC MOSFET driver reference design from Microsemi Corporation. The MSCSICMDD/REF1 is designed to provide a reliable reference driver solution, a means of evaluating silicon carbide MOSFETs in a number of different topologies, as well as a means to assess device performance for parametric test purposes. 


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mXTEND™ SMT Multiband Antenna: FR01-S4-220

14th Fractus_SMT_antennas_PR_PhotoRichardson RFPD Inc. announced the availability and full design support capabilities for the latest mXTEND™ SMT multiband antenna from Fractus, S.A. The Fractus mXTEND antenna boosters leverage Fractus’ Virtual Antenna™ technology to reduce design cycle times by replacing time-consuming, high-NRE custom antenna solutions with miniature, standard, off-the-shelf components.


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Two GaN on SiC RF Transistors: QPD1009 and QPD1010

Qorvo_QPD1009 and QPD1010_PR_Photo

Richardson RFPD Inc. announced the availability and full design support capabilities for two GaN on SiC RF transistors from Qorvo. The discrete GaN on SiC HEMTs operate from DC to 4 GHz. The QPD1009 is a 15 W, 50 V device with an output power level of 17 W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10 W, 50 V QPD1010 features an output power of 11 W at 2 GHz and a linear gain of 24.7 dB at 2 GHz.


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X-Band Gan Power Amplifier: TGM2635-CP

Qorvo_TGM2635-CP_PR_Photo

Richardson RFPD Inc. announced the availability and full design support capabilities for a X-band GaN power amplifier from Qorvo. The TGM2635-CP operates from 7.9 to 11 GHz and provides 100 W of saturated output power with 22.5 dB of large signal gain and greater than 35% power-added efficiency. It is offered in a 10-lead 19.05 mm x 19.05 mm bolt-down package with a pure Cu base for superior thermal management. 


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GaAs MMIC Fundamental Mixers: HMC557A/ HMC773A

ADI_hmc557a_hmc773a_PRPhotoRichardson RFPD Inc. introduced two GaAs MMIC fundamental mixers from Analog Devices. The HMC557A is a general-purpose, double balanced mixer in a 24-lead, ceramic 4 mm x 4 mm LCC package that can be used as an up-converter/down-converter from 2.5 to 7 GHz. The HMC773A general-purpose, double balanced mixer, available in a 24-lead, ceramic 3 mm x 3 mm LCC package, can be used as an up-converter/down-converter from 6 to 26 GHz.


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Silicon Carbide Power MOSFET

Wolfspeed_C3M0065100K_PR_Photo

Richardson RFPD, Inc. announced the availability and full design support capabilities for a silicon carbide power MOSFET from Wolfspeed, a Cree Company. The 1000 V, 65 mΩ C3M0065100K is in an optimized four-lead TO-247-4 package with a separate driver source pin. This package provides lower switching losses with minimal gate circuit ringing due to the Kelvin gate connection. The package features a notch between the drain and source pins.


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