Articles Tagged with ''GaN''

MACOM announced a 300 W GaN on Silicon rugged power transistor in cost effective plastic packaging optimized for use in commercial scale solid-state RF energy applications. Based on MACOM’s Gen4 GaN technology, the new MAGe-102425-300 delivers performance that exceeds LDMOS at an equivalent price profile at scaled volume production levels.

MACOM Technology Solutions Inc. (MACOM) will showcase its industry leading GaN on Silicon portfolio and other high-performance products at IEEE’s International Microwave Symposium (IMS) 2016 in San Francisco, Calif., May 24 - 26. MACOM’s booth will feature new product solutions optimized for commercial, industrial, scientific and medical RF applications.

Richardson RFPD Inc. announced its sponsorship of the Electronic Design Innovation Conference China (EDI CON) 2016 GaN Panel and Small Cell Workshop events. EDI CON China 2016 will be held from April 19-21 at the China National Convention Center in Beijing, China.

Fujitsu Ltd. and Fujitsu Laboratories Ltd. announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75 to 110 GHz) transmissions. This can be used in a high-capacity wireless network with coverage over a radius of several kilometers.

Ampleon has extended its portfolio of GaN RF power transistors based on a 0.5 µm HEMT process technology.

Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, is exhibiting its portfolio of GaN RF devices for L-, S-, C-, and X-Band radar at the 2015 International Radar Symposium India (IRSI-15), which will take place December 15–19 in Bangalore.  

Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, is exhibiting at DMC 2015, which will take place November 30 – December 3 in Phoenix, Ariz.

WIN Semiconductors Corp., the world’s largest pure-play compound semiconductor foundry,announced the expansion of its GaN technology portfolio with addition of the NP45 gallium nitride on silicon carbide process. NP45 is a 0.45μm-gate MMIC technology enabling users to design fully integrated amplifier products as well as custom discrete transistors, and has been optimized for use in 4G macro-cell base station power amplifiers operating at 2.7 GHz and above where bandwidth and linearity performance are key differentiators.

Wolfspeed, a Cree Company, has partnered with Lockheed Martin to provide GaN high power amplifiers (HPAs) for the U.S. Air Force’s Space Fence, which will significantly improve the timeliness with which operators can detect space events that could potentially threaten GPS satellites or the International Space Station.

Richardson RFPD Inc. announced the availability and full design support capabilities for a new 2W GaN driver amplifier from Qorvo. The TGA2958-SM is a packaged Ku-Band amplifier fabricated on Qorvo’s 0.15um GaN on SiC production process (QGaN15). Operating over a 13 to 18 GHz bandwidth, the TGA2598-SM delivers 2W of saturated output power with 20 dB large signal gain and > 25 percent power added efficiency.