Articles Tagged with ''GaN''

Advantech Wireless Inc., a privately-held Canadian corporation and manufacturer of satellite, RF equipment and microwave systems announced the release of the new 2.5 kW TROPO C-Band modular GaN based solid state power amplifier.

Modelithics, Inc., in partnership with TriQuint Semiconductor, has released the latest update to the growing library of high-accuracy non-linear simulation models for TriQuint gallium nitride (GaN) transistors.

Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, introduced the industry’s highest thermal and wideband performance GaN device with a 125 W continuous wave (CW) GaN-on-SiC transistor.

Richardson RFPD, Inc. announced the availability and full design support capabilities for a new 50 to 1218 MHz GaN CATV power doubler amplifier from ANADIGICS.

Richardson RFPD, Inc. announced the availability and full design support capabilities for four new RF GaN on SiC power transistors from TriQuint. The T1G4004532 is a 45 W (P3 dB, at 3.3 GHz) discrete GaN on SiC HEMT that operates from DC to 3.5 GHz, offers gain of 16.5 dB (typical) at 3.3 GHz, with an operating voltage of 32 V. It is offered in flanged and flangeless packages.

Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has introduced the industry’s first GaN transistor for tropospheric scatter (troposcatter) communications applications rated for 200 W continuous wave (CW) and 4.4 to 5.0 GHz operation.

Advantech Wireless, a global trusted leader of wireless broadband communications solutions for commercial, critical infrastructure & government and military clients, announced that it has increased its production capacity of GaN technology based SSPAs and BUCs in order to meet high market demand. 

 RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, unveiled 11 new amplifiers of which six are gallium nitride-(GaN) based products to support the requirements of the new data over cable service interface specification (DOCSIS) 3.1.  

 M/A-COM Technology Solutions Inc. (“MACOM”), announced a new portfolio of surface mount S-Band GaN power products optimized for commercial air traffic control, weather radar and military radar applications. The new products are available in a range of packaging options and power levels. 

 Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has developed a family of 50 V discrete GaN high electron mobility transistor (HEMT) die for operation up to 6 GHz.