Articles Tagged with ''GaN''

Cree Inc., a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), is introducing two industry-leading new products and contributing to a series of workshop presentations about current trends in GaN packaging at the 2015 International Microwave Symposium (IMS).

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, will showcase the industry’s broadest and most advanced Gallium Nitride (GaN) RF product portfolio at IMS2015 in Phoenix, Ariz., May 19-21. MACOM’s booth will feature new, revolutionary Gen 4 GaN on Silicon product solutions optimized for commercial, industrial, scientific and medical applications.

Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the addition of the CMD219C4, a new GaN low-noise amplifier, to their standard product catalog.

Richardson RFPD Inc., announces their attendance and participation at EDI CON 2015, including sponsorships of the GaN Panel and Small Cell Workshop.

Richardson RFPD Inc. announced its sponsorship of the Electronic Design Innovation Conference (EDI CON) 2015 GaN Panel.

M/A-COM Technology Solutions Inc. ("MACOM"), a leading supplier of high-performance analog RF, microwave, millimeter wave and photonic semiconductor products, will showcase a broad portfolio of new products for multi-market, aerospace, defense and networking applications at Booth # 321 at EDI CON 2015 in Beijing, China.

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, announced the new MAGX-000912-650L00 and MAGX-000912-650L0S, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications.

Infineon Technologies AG and Panasonic Corp. have announced an agreement under which both companies will jointly develop Gallium nitride (GaN) devices based on Panasonic’s normally-off (enhancement mode) GaN on silicon transistor structure integrated into Infineon’s surface-mounted device (SMD) packages. In this context Panasonic has provided Infineon with a license of its normally-off GaN transistor structure. This agreement will enable each company to manufacture high performing GaN devices. Customers will have the added advantage of having two possible sources for compatible packaged GaN power switches: a setup not available for any other GaN on silicon device so far.

Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has extended its family of 50 V discrete GaN high electron mobility transistor (HEMT) die with the release of three new components.

Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the release of the CMD219, a 4 to 8 GHz low noise amplifier (LNA) in die form, to their growing line of standard GaN amplifier products.