Richardson RFPD Inc. introduced the MMRF5014H, a 125 W continuous wave GaN on SiC transistor that offers exceptional wideband and thermal performance. With an extended operational bandwidth (1 to 2690 MHz), high gain (16 dB at 2500 MHz, typical), and high ruggedness, the new transistor is ideally suited for wideband amplifiers in scientific equipment, as well as in military communications applications, including jammers and electronic warfare systems.