We use cookies to provide you with a better experience. By continuing to browse the site you are agreeing to our use of cookies in accordance with our Privacy Policy.
In a new joint study with the Chalmers University of Technology Department of Microtechnology and Nanoscience, SweGaN explored QuanFINE® epitaxial wafer performance, based on GaN HEMT technology at Chalmers, Gothenburg, Sweden. The study revealed that the new concept using a total GaN layer thickness of 250 nm does not compromise the material quality and device performance.
“In the past few years, RF applications have received a boost from the implementation of GaN technology,” asserts Ezgi Dogmus, PhD. Technology & Market Analyst at Yole Développement (Yole). “The main GaN RF market drivers remain telecom and defense applications.” The total GaN RF market will increase from US$740 million to more than US$2 billion by 2025, with a CAGR of 12%.
Keysight Technologies, Inc. announced PathWave Waveform Analytics, an edge-to-cloud computing application that improves anomaly detection and reduces data storage costs in pre-silicon validation using machine learning algorithms.
Samsung Foundry certified Ansys® RaptorH™ electromagnetic (EM) simulation solution for developing advanced systems-on-chip (SoC) and two and a half dimensional/three-dimensional integrated circuits (2.5D/3D-IC).
ON Semiconductor has announced sampling of its new QCS-AX2 chipset family that supports the 6 GHz spectrum band based on the enhanced Wi-Fi 6E standard.
Microwave Journal editors Pat Hindle and Gary Lerude talk with Marki Microwave CEO, Chris Marki, and Director of Products, Doug Jorgesen, about the evolution of the company from a hybrid mixer company to a cutting edge MMIC company.
Barrie Gilbert, the iconic IC designer known for discovering the Translinear Principle and inventing the Gilbert cell mixer, died on January 30, 2020. His long-time colleague, John Cowles, pays tribute to Barrie's life and legacy.
Designed for electronic warfare, radar and test instrumentation, Qorvo has introduced a high performance wideband GaN on SiC power amplifier that provides 10 W output power over 2 to 20 GHz.
Cree Inc. and STMicroelectronics announced the expansion and extension of an existing multi-year, long-term silicon carbide (SiC) wafer supply agreement to more than $500 million.
Carbonics announced that carbon nanotube technology has for the first time achieved speeds exceeding 100 GHz in RF applications, surpassing the performance of current RF CMOS technology.