Semiconductors / Integrated Circuits

Lossy Linearizers for Reduction of Nonlinear Distortion

Description of a technique used for reducing distortion components in nonlinear electronic or electro-optic devices
Technical Feature Lossy Linearizers for Reduction of Nonlinear Distortion This article describes a technique for reducing distortion components in nonlinear electronic or electro-optic devices. The linearizer circuits are capable of generating both even- or odd-order distortion, or any combination thereof. Both compressive (180°) and expansive (0°) nonlinearity can be...
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Design of a Novel Vector Modulator

Introduction to a vector modulator that controls magnitude and phase of an input signal
Technical Feature Design of a Novel Vector Modulator A vector modulator that controls magnitude and phase of an input signal is proposed in this article. The previous magnitude and phase-controlling circuits, composed of an attenuator and a phase shifter, permit phase and gain cross-coupling. The proposed modulator, which is...
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RAWCON2001 Conference Report

A recap of the 2001 IEEE Radio and Wireless Conference held August 19 to 22 in Waltham, MA
Special Report RAWCON2001 Conference Report RAWCON2001 Highlights Interdisciplinary Wireless Data Technology Michael S. Heutmaker RAWCON2001 General Chair The 2001 IEEE Radio and Wireless Conference (RAWCON2001), held in Waltham, MA, on August 19 to 22, 2001, explored interdisciplinary aspects of RF technology and wireless communications. This year several elements of...
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Advanced RF Technologies for the Wireless Market

Detailed overview of the different architectures available for transceiver ICs with greater emphasis on near-zero IF configuration
Technical Feature Advanced RF Technologies for the Wireless Market Yvan Droinet Philips Semiconductors Caen, France Most products in the wireless world require more and more miniaturization. This incentive leads integrated circuit designers to develop innovative architectures with higher and higher integration levels. On the one hand, there is a...
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A Simple VVA RFIC Design with a Focus on Repeatability and Stability

Description of an FET-based voltage variable attenuator, its characteristics, design trade-offs and common topologies
Technical Feature A Simple VVA RFIC Design with a Focus on Repeatability and Stability A novel voltage variable attenuator (VVA) integrated circuit reduces the sensitivity of the transfer curves to temperature and process variations. The new solution is achieved without compromising the simplicity of a single positive voltage control...
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Research@mwjournal.com

Comprehensive overview of microwave technology research projects currently being investigated by European academic institutions and commercial organizations
European Supplement Research@mwjournal.com Richard Mumford Microwave Journal European Editor A commitment to well funded, focused, commercially viable research is critical to the future prosperity of the microwave industry. In this special report Microwave Journal takes a snapshot of the research projects being investigated by academic and commercial establishments across...
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Integrating System and Circuit Simulation Capabilities

Introduction to Microwave Office 2002, the most recent version of the popular design suite
PRODUCT FEATURE  Integrating System and Circuit Simulation Capabilities Applied Wave Research Inc. (AWR) El Segundo, CA Version 5.0 of Microwave Office Design Suite will begin shipping in the fourth quarter of this year. The new release, called Microwave Office 2002, includes integrated system simulation capabilities that close the gap...
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A 17 to 27 GHz GaAs MMIC Gain Block Amplifier from Multiple Sources

Development of GaAs MMIC three-stage gain block amplifier covering the 17 to 27 GHz frequency range
PRODUCT FEATURE A 17 to 27 GHz GaAs MMIC Gain Block Amplifier from Multiple Sources Mimix Broadband Webster, TX A GaAs MMIC three-stage gain block amplifier covering the 17 to 27 GHz frequency range has been developed that features the option of individually biasing the three stages or biasing...
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Finite Element Determination of the Intrinsic Small-signal Equivalent Circuit of MESFETs

Description of a theoretical procedure used to calculate the intrinsic elements of a FET small-signal equivalent circuit
TECHNICAL FEATURE Finite Element Determination of the Intrinsic Small-signal Equivalent Circuit of MESFETs The finite element time domain method is used to determine the intrinsic elements of a broadband, small-signal equivalent circuit (SSEC) of FETs. The values of the different elements are calculated from the Y parameters of the...
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A Method of Measuring Large-signal S-parameters of High Power Transistors

Determination of large-signal scattering parameters of high power transistors from measured data during normal operation
TECHNICAL FEATURE A Method of Measuring Large-signal S-parameters of High Power Transistors A measurement method for scattering parameters (S-parameters) of high power transistors is presented. The proposed method directly determines the S-parameters of high power transistors by measuring overall gain, phase and S-parameters of input and output matching network...
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