Articles Tagged with ''gaas''

Custom MMIC, (www.CustomMMIC.com), a developer of performance-driven monolithic microwave integrated circuits, announces the introduction of the CMD172, a new voltage-variable attenuator (VVA) in die form operating from 18 to 40 GHz.

RF Micro Devices Inc. announced the expansion of the company's entry solutions product portfolio to include multiple new solutions for 2G and 3G entry smartphones. The new RF solutions are designed to solve the increasingly complex RF requirements of entry-level 2G and 3G smartphones related to cost, band count, and thermal dissipation.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components, announced that RFMD Fellow Kevin W. Kobayashi has been named a Fellow of the Institute of Electrical and Electronics Engineers (IEEE) by the IEEE Board of Directors.

TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, has released two new dual matched low noise amplifiers that are ideally suited for balanced high performance RF design configurations. These integrated LNAs are highly linear and offer very low noise figures, high output and include automatic shut-down capability for use in Time Division Duplex (TDD) and Frequency-Domain Duplex (FDD) applications.

In the past RF power amplifiers (RFPAs) for cell phone handsets have relied exclusively on GaAs or InGaP-based RFICs. However in recent years RF CMOS RFPA technology has made significant strides and is now strongly impacting the territory that was previously the exclusive domain of GaAs or InGaP technology. This new report from Engalco provides information concerning the players, industry dynamics and detailed, highly granular, market forecasts through to year 2017.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for two new GaAs hybrid amplifiers from ANADIGICS. The ACA2786 and ACA2788 each consist of two pairs of parallel amplifiers that are optimized for exceptionally low distortion and noise figure with input and output transient voltage protection.

The Samsung Galaxy Appeal is one of the first mass produced phones to ship with a high performance 3G CMOS power amplifier (PA).  Despite an historical presence from CMOSin the 2G handset market concerns over performance have severely limited its progress in the 3G domain.

TriQuint Semiconductor Inc., a leading RF products manufacturer and foundry services provider, is rolling out new processes to more quickly expand its catalog of broad-market products for commercial and defense customers. As a result, TriQuint will spotlight 12 new products at European Microwave Week in Amsterdam, October 29-31.

Hittite Microwave Corp. launched three new GaAs pHEMT MMIC power amplifiers which cover the 9 to 14 GHz frequency range and are ideal for microwave radio, military and space, SATCOM and test and measurement applications.

Gaas Labs LLC, a private investment fund targeting the communications semiconductor market led by industry veteran John Ocampo, announced that it has acquired privately-held Nitronex Corp., an innovative leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets.