RF Micro Devices Inc.

RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, announced that it has earned Huawei's Supplier of the Year Award at a ceremony held today at Huawei's headquarters in Shenzhen, China. The award recognizes RFMD as Huawei's best supplier of RF components, which are used in Huawei's mobile phones and infrastructure products. This is the second year in a row that RFMD has earned Huawei's Supplier of the Year Award.

RF Micro Devices, Inc. and TriQuint Semiconductor, Inc. revealed that the holding company under which the companies will combine in a merger of equals will be named Qorvo™, Inc. The companies also unveiled the new Qorvo logo and stock trading symbol, which they will begin using immediately upon closing the merger. 

RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, announced it has successfully completed a recently announced expansion of its test, tape and reel, and assembly facility, located in Beijing, China. In addition to newly qualified internal assembly capacity for power amplifiers (PA), switch-based products, and antenna control solutions, RFMD is also qualifying advanced flip chip capabilities for its 2G, 3G, and 4G LTE and TD-LTE products.

RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, announced it has shipped more than one million RF7196D high-power, high-efficiency CMOS power amplifiers (PAs). The ultra-low cost RF7196D is RFMD's newest and most innovative CMOS PA, delivering a revolutionary combination of cost, size and performance. It is in mass production in support of multiple high-volume 2G and 3G handset platforms, and shipments are expected to increase rapidly, reaching approximately 10 million units by the end of the September quarter.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, reported financial results for the company's fiscal 2014 first quarter, ended June 29, 2013.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, today introduced the RFHA1027, a gallium nitride (GaN) matched power transistor (MPT) that will deliver industry-leading pulse power performance of 500W in a compact flanged package at L-Band.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced its release of a broadband, microwave voltage-controlled attenuator, the RFSA2113.

RFMD will be exhibiting at IMS 2013 at booth 730. Explore the RFMD® industry-leading RF and microwave product portfolio with kiosks featuring solutions for WiFi and smart energy, wireless infrastructure, GaN RF power, and microwave MMICs.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, reported financial results for the company's fiscal 2013 fourth quarter, ended March 30, 2013.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced the appointment of James A. Clifford as vice president, foundry services, effective April 1, 2013.