Articles Tagged with ''gaas''

Custom MMIC (www.CustomMMIC.com), a developer of performance driven monolithic microwave integrated circuits (MMICs), introduced three new devices from its growing MMIC IP/design library. CMD162 is a GaAs MMIC low-noise amplifier (LNA) chip for applications from 26 to 34 GHz. Optimized for 30 GHz satellite communications, the CMD162 boasts a typical noise figure of 1.7 dB with a small-signal gain of 22 dB and an output 1 dB compression point of +7 dB.

Development of a low cost, compact integrated Passive Device technology including process description and example devices

Freescale Semiconductor revealed its first RF power amplifier product built using gallium nitride (GaN) technology. The company’s RF power GaN products will initially target the cellular infrastructure market, with potential future applications including avionics, radar, ISM and software-defined radio.

Custom MMIC, a developer of performance driven monolithic microwave integrated circuits (MMICs), is offering two new devices from its growing MMIC design library. The CMD157 (die) and CMD157P3 (packaged) are GaAs MMIC low-noise amplifiers (LNAs) for applications from 6 to 18 GHz.

M/A-COM Tech announced a new Transmit/Receive module Driver IC that provides 6-Bit serial/parallel logic control and T/R switch control for multifunction T/R modules. 

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a pair of new InGaP HBT amplifiers from Freescale Semiconductor, Inc. optimized for wireless infrastructure applications.

Hittite Microwave Corp. announced the release of two new amplifier and three new mixer products that are ideal for microwave & millimeterwave radios, military sensors, test & measurement equipment and SatCom applications from 24 to 46.5 GHz.

Nitronex has been awarded a Phase I SBIR to develop a highly efficient 20W X-band GaN power amplifier MMIC for use in long range RF telecommunications. Since 2005, Nitronex has won 16 government contract awards that have funded the development of materials, devices, discretes, MMICs, and process technologies, as well as manufacturing maturation.