Articles Tagged with ''gaas''

TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, has released the first two members of its cost-effective TriAccess™ hybrid-packaged power doubler family. These CATV infrastructure devices are the first to utilize proprietary on-die linearization for best-in-class performance including excellent gain and low distortion. TriQuint is also announcing full production of two new GaN monolithic microwave integrated circuit (MMIC) power doublers for CATV infrastructure.

RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, introduced the world's first 6-inch GaN-on-Silicon Carbide (SiC) wafers for manufacturing RF power transistors for both military and commercial use. The company is converting all GaN production and development to 6-inch diameter wafers using its existing high-volume, 6-inch GaAs foundry to reduce platform cost for the growing GaN device market.

A new white paper from AWR, “RF/Microwave EDA Software Design Flow Considerations for PA MMIC Design,” examines a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) power amplifier (PA) design approach from a systems perspective.

TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, announced that it has acquired CAP Wireless (Newbury Park, CA) and its patented Spatium™ RF power combining technology that replaces traveling wave tube amplifiers (TWTAs) in communications and defense systems. TriQuint estimates that the TWTA market opportunity will be about $600 million by 2015.

KCB Solutions, an ITAR and AS9100 accredited microwave design and manufacturing center, is pleased to announce a new line of fully-screened Hi-Rel switches, attenuators, and power amplifiers. These GaAs devices meet the screening and qualification requirements of MIL-PRF-38534 and MIL-PRF-38535 and are available in a choice of leaded packages or newly qualified KCB hermetic QFNs.

KCB Solutions is pleased to announce a suite of MIL-STD certified products and services for the military, aerospace, and defense market. They’ll be exhibiting in booth #1610 at the International Microwave Symposium in Seattle, WA June 4-6th. Senior staff will be on-hand to answer questions about KCB’s leading edge semiconductor packaging services, manufacturing services and recently launched standardized and fully-screened components.

TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, released its new gallium nitride (GaN) integrated power doubler with superior performance for fast-growing CATV infrastructure.

Teseq has expanded its broadband amplifier line to include a Class A linear and low distortion model that operates from 10 kHz to 400 MHz with a rated power level of 260 W. 

Link Microtek has been appointed as a representative for United Monolithic Semiconductors in the UK and Ireland.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced a new Gallium Arsenide (GaAs) sourcing strategy intended to increase manufacturing flexibility, expand gross margin, and support aggressive growth.