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We invite you to review our complete catalog of packaged and unpackaged semiconductor diodes for specific RF and microwave applications. Products include silicon varactors, PIN, Schottky and GaAs Schottky diodes. Design engineers will find this guide especially useful in finding the key specifications for Skyworks’ semiconductor products to easily select appropriate part numbers.
Skyworks is committed to operating under business practices that “meet the needs of the present without compromising the ability of future generations to meet their own needs.” Our efforts include policies and programs that encompass a variety of elements including environmental to labor, health and safety, ethics, stewardship, and management systems.
WiFi and Bluetooth® connectivity solutions for mobile devices, computing, networking and home entertainment applications. Our 2.4 GHz, 5 GHz, and dual-band products cover WLAN 802.11a,b,g,n, and high throughput 802.11ac standards. The broad portfolio supports a wide range of end products from access point and routers to mobile/portable subscriber equipment.
Skyworks is an innovator of high performance analog semiconductors. Leveraging core technologies, Skyworks supports automotive, broadband, cellular infrastructure, energy management, GPS, industrial, medical, military, wireless networking, smartphone and tablet applications. Headquartered in Woburn, Mass., Skyworks is worldwide with engineering, manufacturing, sales, and service facilities throughout Asia, Europe and North America.
Skyworks' Product Selection Guide offers specifications and block diagrams representing our broad product portfolio. New additions include WiFi Connectivity and Power Management product information and block diagrams. For your convenience, part numbers in the catalog PDF link to product information on Skyworks' Web site www.skyworksinc.com.
We invite you to review our new product offering from our broad portfolio for key markets and applications, including block diagrams and product specifications. New products are continually being introduced at Skyworks. For the latest information, visit our Web site at www.skyworksinc.com.
Diodes are used in a variety of designs, such as power detector, and ESD protection circuits. It is highly desirable to have good diode model that can accurately predict bias-dependent Sparameters and harmonics. Standard models fail to predict accurate CV dependence and cannot give the right impedance and nonlinearity.
Scaling rules with unknown coefficients are assumed for each model parameter, which correlated model parameters among different devices. Scalable model can thus be extracted by a multi-device optimization. It is demonstrated with the optimization on nine devices that our approach yields accurate scaling rules for each parameter and very good fitting for each device.
The critical parameters in a plasma process include temperature, gas flow, gas chemistries, pressure, and effective power. Each of these parameters modifies the etching or deposition-process characteristics. This paper demonstrates that overall process uniformity can be enhanced by metalizing the backside of the wafer.
During the MBE growth process of a pHEMT structure, the growth of buffer layer and superlattice generally take more than 70% of the overall resources and time. Here we focus on the reduction of the MBE growth time by optimizing the buffer and superlattice structures, and discusses the challenges associated with thinning these layers.
