GaN on SiC SPDT Switches: TGS2351-SM, 2352, 2353

Superior power handling and isolation performance ideal for defense applications.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for three single-pole, double-throw (SPDT) switches designed using the 0.25µm GaN on SiC production process from TriQuint Semiconductor, Inc. (TriQuint).

The packaged TGS2351-SM operates from DC to 6 GHz and typically provides up to 40 W input power handling at control voltages of 0 / -40 V. This switch maintains low insertion loss of less than 1 dB and high isolation of -40 dB typical. The TGS2352 operates from DC to 12 GHz and typically provides up to 20 W input power handling at control voltages of 0 / -40 V. This switch maintains low insertion loss of 1 dB and high isolation of -35 dB typical. The TGS2353 operates from DC to 18 GHz and typically provides up to 10 W input power handling at control voltages of 0 / -40 V. This switch maintains low insertion loss of 1.5 dB and high isolation of -30 dB typical.

The new SPDT switches are ideally-suited for high power switching applications, including electronic warfare, commercial and military radar, and high power communications systems.

Additional key features of the devices include:

Part Number	Frequency Range (GHz)	Insertion Loss (dB)	Isolation (dB)	Max Input Power (dBm)	Switching Time (ns)	Package Type (mm)
TGS2351- SM	0-6	0.8	-40	46	50	4.0 x 4.0 x 1.43
TGS2352	0-12	1.0	-35	43	31	1.15 x 1.65 x 0.1
TGS2353	0-18	1.5	-30	40	31	1.15 x 1.65 x 0.1