Richardson RFPD, an Arrow Electronics company, is a global leader in the RF, wireless, IoT and power technologies markets. It brings relationships with many of the industry’s top radio frequency and power component suppliers. Whether it’s designing components or engineering complete solutions, Richardson RFPD’s worldwide design centers and technical sales team provide comprehensive support for customers’ go-to-market strategy, from prototype to production.
RF and wireless communication system development is resource intensive, in both effort and materials. Typical programs can take months to years to develop and bring to market. Richardson RFPD has assembled a suite of solutions to both accelerate and lower the cost of radio system development. These solutions include off-the-shelf hardware, hardware customization, licensable design files, and open-source software.
DownloadRichardson RFPD offers a wide array of interconnect products from industry-leading manufacturers. We have a range of low- and high[1]power options for frequencies to 110 GHz, including phase-stable and phase-matched components for precise performance. Products can be armored or ruggedized for durability, as well as outdoor- and IP[1]rated for severe environmental conditions.
Download5G system design involves not only component-level optimization but also tradeoffs between energy consumption in different parts of the system, such as the modem SoC and the RF front-end.
DownloadDetailed list of products, services, and franchised suppliers of Richardson RFPD.
DownloadThis document outlines the procedure and profile setting of the RadioThorium module for baseband TDD and IF-mode FDD configurations. Richardson RFPD’s RadioThorium is a family of general-purpose, high-performance, standalone frequency converters. The first RadioThorium product, created in partnership with Signal Craft Technologies (SCT), covers an output frequency range of 24 GHz to 44 GHz. The module is designed to interface directly with an external baseband platform, such as Analog Device’s MxFE (Mixed Signal Front-End) or similar software defined radio platforms.
DownloadThe benefits of Wolfspeed GaN-on-SiC RF amplifiers have been well-documented—they provide outstanding power density, reliability and better efficiency than their traditional GaAs-based counterparts. In this paper, a GaN-on-SiC-based RF amplifier is optimized for 4.4–5.0 GHz troposcatter applications.
DownloadEngineers are constantly under pressure to design smaller, lower-power and higher-performance devices. A lack of time and resources are often also part of the challenge. Richardson RFPD engineers and others have teamed with Analog Devices to introduce a new, highly integrated transceiver and have built SoMs and RF front ends to interface with it. Our collective goal is to provide engineers with small, low-power, high-performance starting points for their own projects that will reduce design time and the amount of needed resources.
DownloadThe global RF power semiconductor market is presently valued at approximately $1.5 billion. These devices provide the RF amplification for a wide variety of applications, from MRI to broadcast transmitters, radar systems and cellular base stations. Choosing the right component category is critical to developing amplifier systems that meet performance, size, cost and time-to-market requirements, and there are multiple options to consider. This paper covers component construction options available for all RF power amplifier technologies, including but not limited to GaN. There are three broadly available RF power semiconductor devices−discrete transistors, impedance matched field effect transistors (IMFETs), and MMIC amplifier ICs. Each device has a unique value proposition that will be addressed in this paper.
DownloadThe global RF power semiconductor market is presently valued at approximately $1.5 billion. These devices provide the RF amplification for a wide variety of applications, from MRI to broadcast transmitters, radar systems and cellular base stations. Choosing the right component category is critical to developing amplifier systems that meet performance, size, cost and time-to-market requirements, and there are multiple options to consider. This paper covers component construction options available for all RF power amplifier technologies, including but not limited to GaN. There are three broadly available RF power semiconductor devices−discrete transistors, impedance matched field effect transistors (IMFETs), and MMIC amplifier ICs. Part I of this paper addressed the unique value proposition for each device. Now the discussion turns to applications and use cases.
DownloadDoherty combiner product line covers major communication bands ranging from 700 MHz to 2700 MHz. Each model is optimized for the center frequency of targeted frequency band. However, as new spectrum is being released, the preâdesigned standard models can be tuned in customer applications to meet performance. This document provides guidelines to tune these standard models for offâband applications.
DownloadThe published specifications for leakage current in RF power devices are often a source of concern and confusion for engineers and technicians. This paper examines the real meaning behind the leakage current specifications and offers guidance on properly testing a device for leakage current.
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