Integra’s first 100 V RF GaN product delivers breakthrough output power performance of 3.6 kiloWatts at 70% efficiency for next generation avionic systems
Integra today introduced the industry’s first 100 V RF GaN/SiC technology targeting a wide-range of applications including radar, avionics, electronic warfare, industrial, scientific and medical systems. Operating at 100 V, this technology shatters RF power performance barriers by achieving 3.6 kiloWatts (kW) of output power in a single GaN transistor.