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Richardson RFPD introduces four new RF GaN on SiC HEMTs from TriQuint

Richardson RFPD, Inc. announced the availability and full design support capabilities for four new RF GaN on SiC power transistors from TriQuint. The T1G4004532 is a 45 W (P3 dB, at 3.3 GHz) discrete GaN on SiC HEMT that operates from DC to 3.5 GHz, offers gain of 16.5 dB (typical) at 3.3 GHz, with an operating voltage of 32 V. It is offered in flanged and flangeless packages.


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RFMD earns Huawei's supplier of the year award

RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, announced that it has earned Huawei's Supplier of the Year Award at a ceremony held today at Huawei's headquarters in Shenzhen, China. The award recognizes RFMD as Huawei's best supplier of RF components, which are used in Huawei's mobile phones and infrastructure products. This is the second year in a row that RFMD has earned Huawei's Supplier of the Year Award.


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