Articles Tagged with ''power''

Laird Technologies Inc., a global leader in the design and supply of customized performance-critical components and systems for advanced electronics and wireless products, announced the release of its new eTEG Series Thin Film Energy Harvesting product line.  

The Samsung Galaxy Appeal is one of the first mass produced phones to ship with a high performance 3G CMOS power amplifier (PA).  Despite an historical presence from CMOSin the 2G handset market concerns over performance have severely limited its progress in the 3G domain.

RF Micro Devices Inc. announced that RFMD has production released two highly linear gallium nitride (GaN) RF unmatched power transistors (UPTs) —RFHA3942 (35W) and RFHA3944 (65W) — that deliver superior linear performance versus competing GaN transistors.

Linear Technology Corp. introduces the LTC2945, a wide range I²C system monitor that monitors the current, voltage and power of any 0 to 80 V rail. In many cases, prior power monitoring solutions are limited to 3 to 5 V supplies and monitor voltages less than 36 V, requiring additional circuitry to monitor higher voltages. The LTC2945 has flexible power supply options, deriving power from a 4 to 80 V monitored supply, a 2.7 to 80 V secondary supply, or from the onboard shunt regulator.

Cree Inc. introduces a range of new 50V GaN HEMT devices enabling a significant reduction in the energy needed to power cellular networks. The world’s cellular network is estimated to consume more than 100TWh of electricity per year (approximate value of $12 Billion US Dollars) and 50-80 percent of the networks’ power is consumed by the systems’ power amplifiers and feed infrastructure.

Microsemi Corp., a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, delivered the world's first monolithic silicon germanium (SiGe) RF front-end (FE) device for the 5th generation of Wi-Fi devices based on IEEE 802.11ac standard. Benefitting from its industry-leading integration levels and utilizing high-performance SiGe process technology, the new LX5586 RF FE provides significant performance and cost advantages over existing technologies.  

Building on its leadership position in the digital broadcast market, NXP Semiconductors N.V. announced that it has developed the industry’s first ultra wideband solution for Doherty architectures. This patent-pending solution will uniquely enable manufacturers of digital transmitters to enjoy the high-efficiency gains that Doherty power amplifiers confer with greatly expanded bandwidth.

Northrop Grumman Corp. has developed a line of gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) for military and commercial uses. These devices represent the first commercial availability of GaN-based components from the company.

NuWaves Engineering of Middletown, Ohio, an international Radio Frequency (RF) and Embedded Systems solutions provider, will be exhibiting its high-performance, miniaturized RF products and also demonstrating its most recent technological advancement, a Power Amplifier Linearizer Module (“PALM”) at MILCOM 2012. 

TriQuint Semiconductor Inc., a leading RF products manufacturer and foundry services provider, is introducing four new rugged GaN HEMT RF power transistors that offer superior gain and efficiency. TriQuint’s GaN transistors can cut the size of amplifier line-ups in half while improving efficiency and gain.