Articles Tagged with ''power''

MACOM introduced its series of GaN in Plastic packaged power transistors for high-performance civilian and military radar and communications systems. They scale to peak pulse power levels of 100 W – the highest among competing components in this product category.

Teseq has expanded its broadband amplifier line to include a Class A linear and low distortion model that operates from 10 kHz to 400 MHz with a rated power level of 260 W. 

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a family of new directional power detectors from M/A-COM Technology Solutions Inc. (M/A-COM), featuring integrated low loss directional couplers and built-in temperature compensation circuits.

CTS Electronic Components Inc. announces development of Model 144, an oven controlled crystal oscillators (OCXOs), which uses the unique internal heated resonator (IHR) technologies to significantly reduce power consumption while maintaining excellent performance.

Richardson RFPD Inc. announces immediate availability and full design support capabilities for a new 200 W solid state, broadband, high power pallet amplifier featuring Freescale Semiconductor Inc. (Freescale) enhanced rugged LDMOS devices.

The emerging market for Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives.

Aeroflex Inc., a wholly owned subsidiary of Aeroflex Holding Corp., announced that it has added support for Bird Technologies' through-line Bird Wideband Power Sensors (WPS) to the industry leading 3550 Hand-held Radio Test System. The addition of the Bird 5017 and support for other Bird power sensors allows the 3550 to improve measurement accuracies for in field test applications.

API Technologies Corp., a provider of RF/microwave, microelectronics, and security solutions for critical and high-reliability applications, has expanded its power amplifier line of products to include the latest in GaN technology driven designs. This expanded line is specially intended for use in electronic warfare, RCIED countermeasures, and national security jammer applications where the use of rugged and highly reliable power amplifier designs is mission critical.

RFMW Ltd. announces design and sales support for TriQuint Semiconductor’sTGF2025 high efficiency heterojunction power FET. This discrete device utilizes TriQuint’s proven standard 0.25um power pHEMT production process featuring advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.

TriQuint Semiconductor Inc. has released three new packaged GaAs RF power amplifiers that deliver high output, gain and efficiency for commercial and defense applications including point-to-point microwave radio, radar, VSAT and related applications.