Articles Tagged with ''power''

Phase Matrix's newest addition to the QuickSyn® line of microwave frequency synthesizers is a 10 GHz synthesizer housed in a very compact package, only 4 x 4 x 0.8 inches.  The new synthesizer, model FSL-0010, employs the revolutionary phase-refining QuickSyn technology, which allows this line of signal sources to perform with remarkably low phase noise, switch between frequencies very quickly, and consume power efficiently. 

KCB Solutions is pleased to announce a new suite of SPST through SP6T switches designed to meet high power-handling requirements from 50 to 200 Watts. These switches are available in QFN-style packages and thermally conductive flange-mount packages.

IXYS Corp., a leader in power semiconductors, mixed-signal and digital ICs for power conversion and motion control applications, announced the introduction of the IXRFD630 and IXRFD631 High Power RF MOSFET Drivers by its IXYS Colorado division. These drivers succeed the DEIC420 and DEIC421 and represent the next generation of RF driver for many RF applications including 13.56 and 27.12 Mhz RF power.

United Monolithic Semiconductors (UMS) announced the frequency band of the CHA3801-QDG LNA has been increased from 1.25 to 1.75GHz to 1 to 2GHz. 

Texas Instruments Inc. (TI) introduced a family of 12-bit, 500- to 900-MSPS analog-to-digital converters (ADCs) that reduce board space by 80 percent while providing industry-leading signal-to-noise ratio (SNR) and spurious-free dynamic range (SFDR).

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, today introduced the RFHA1027, a gallium nitride (GaN) matched power transistor (MPT) that will deliver industry-leading pulse power performance of 500W in a compact flanged package at L-Band.

Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet the requirements of the U.S. aerospace and defense (A&D) market.

Richardson RFPD Inc. announces an exclusive IMS 2013 promotion featuring an RF Power Detector Kit from Analog Devices Inc. (ADI).

Cree Inc. reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth.  As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve channel capacity and speed of wireless systems, while simultaneously lowering power consumption of transmission amplifiers.

Vaunix Technology Corp., (www.vaunix.com), a manufacturer of USB controlled and powered test equipment, is pleased to announce they’ll be displaying their latest models of USB powered Lab Bricks at the International Microwave Symposium (IMS) in Seattle, WA June 4-6th in booth #2042.