Designed for defense and aerospace applications

Richardson RFPD Inc. announced the availability and full design support capabilities for four GaN on SiC high-electron-mobility transistors from Qorvo.

The QPD1000 is a 15 W (P3dB), 50 Ω-input matched discrete GaN on SiC HEMT that operates from 30 MHz to 1.215 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The CW- and pulse-capable device is housed in a 5 mm x 6 mm leadless SMT package that saves real estate of already space-constrained handheld radios. It is also suitable for radar and jammer systems.

The QPD1003 is a 500 W (P3dB) internally-matched discrete GaN on SiC HEMT that operates from 1.2 to 1.4 GHz and a 50 V supply rail. The device is GaN IMFET fully-matched to 50Ω in an industry-standard air cavity package and is ideally suited for military and civilian L-band radar applications. The device can support pulsed and linear operations.

The 125 W (P3dB) QPD1008L and 65 W (P3dB) QPD1015L are wideband unmatched discrete GaN on SiC HEMTs that operate from DC to 3.2 GHz and DC to 3.7 GHz, respectively, and a 50 V supply rail. The devices are in industry-standard air cavity packages and are suitable for military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The devices can support pulsed, CW and linear operations. They are also available in flangeless packages (QPD1008 and QPD1015).

Evaluation boards for the new devices are available, as follows: QPD1000EVB1,

QPD1000EVB2, QPD1003EVB, QPD1008EVB, QPD1015EVB, and QPD1015LEVB.

According to Qorvo, additional key specifications of the new devices include:

To find more information or to purchase these products today online, please visit the QPD1000, QPD1003, QPD1008L / QPD1008, and QPD1015L / QPD1015 webpages. The devices are also available by calling 1-800-737-6937.