Ideal for range of military and civilian radar and communications applications
Richardson RFPD Inc. announced the availability and full design support capabilities for a new discrete GaN on SiC HEMT from TriQuint / Qorvo.
The 30 W (P3 dB) TGF3021-SM operates from 0.03 to 4.0 GHz and is constructed with TriQuint’s TQGaN25 production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
The new transistor is ideally suited for military and civilian radar, land mobile and military radio communications, test instrumentation, wideband and narrowband amplifiers, and jammer applications. It is available in an industry-standard 3 mm x 4 mm surface mount QFN package.
According to TriQuint / Qorvo, additional key features of the TGF3021-SM include:
- Output power (P3dB): 36.0W at 2 GHz
- Linear gain: 19.3 dB at 2 GHz
- Typical PAE (3dB): 72.7% at 2 GHz
- Operating voltage: 32V
- Low thermal resistance package
- CW- and pulse-capable
To find more information, or to purchase this product today online, please visit the TGF3021-SM webpage. The device is also available by calling 1-800-737-6937.
