Enables wideband gain and power performance, optimized output power and efficiency
Richardson RFPD Inc. announced the availability and full design support capabilities for a new discrete GaN on SiC HEMT from TriQuint / Qorvo.
The 10 W (P3dB), 50 Ω input-matched TGF3015-SM operates from 0.03 to 3 GHz. The integrated input-matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3 mm x 3 mm package.
The TGF3015-SM is ideally suited for military and civilian radar, land mobile and military radio communications, test instrumentation, wideband or narrowband amplifiers, and jammer applications.
According to TriQuint / Qorvo, additional key features of the TGF3015-SM include:
- Output power (P3dB): 11W at 2.4 GHz
- Linear gain: 17.1 dB at 2.4 GHz
- Typical PAE3dB: 62.7% at 2.4 GHz
- Operating voltage: 32V
- Low thermal resistance package
- CW and pulse capable
Evaluation boards are available upon request.
To find more information, or to purchase this product today online, please visit the TGF3015-SM webpage. The device is also available by calling 1-800-737-6937.
