Richardson RFPD Inc. announced the availability and full design support capabilities for two new L-band 90 W GaN modules from M/A-COM Technology Solutions.
Both of the new 2-stage modules feature a land grid array (LGA) pattern for enhanced thermal flow, are offered in compact (14 x 24 mm2) “True SMT” packages, and do not require copper coining or complicated thermal management techniques on the system PC board.
They are fully-matched, with decoupled DC and RF. Under pulsed conditions, they can deliver output power greater than 90W, with 30 dB typical associated gain and 60% typical power added efficiency. A flexible design allows for gate and/or drain pulsing. Additional features include a gate voltage sense port for use in temperature compensation or pulse droop compensation.
Additional key features of the MAMG-000912-090PSM include:
- Optimized for pulsed avionics applications in the 960–1215 MHz band
- GaN on SiC D-Mode Transistor Technology
- Typical Bias: 50V, Class AB
- Pulse width up to 600 μs
- MTTF = 600 years (TJ < 200°C)
- Evaluation board available
Additional key features of the MAMG-001214-090PSM include:
- Optimized for pulsed radar applications in the 960–1215 MHz band
- GaN on SiC D-Mode Transistor Technology
- Typical Bias: 45V, Class AB
- Up to 3 ms Pulse Width and 10% Duty Cycle
- MTTF = 600 years (TJ < 200°C)
- Evaluation board available
To find more information, or to purchase these product today online, please visit the MAMG-000912-090PSM and MAMG-001214-090PSM webpages. The devices are also available by calling 1-800-737-6937.
