Package styles include SOT-227, TO-247 and D3PAK
Richardson RFPD Inc. announced the availability and full design support capabilities for three new 1200 V, 80 mΩ SiC MOSFETs from Microsemi Corporation.
The new MOSFETs are built on Microsemi's patented SiC MOSFET technology, which features best-in-class RDS(on) vs. temperature, ultra-low gate resistance for minimizing switching energy loss, superior maximum switching frequency, and outstanding ruggedness with superior short circuit withstand.
They are available in three different package styles, as follows:
|
Part Number |
Current |
Drain-source Break-down |
Continuous Drain Current (TC=25ºC) (A) |
Continuous Drain Current (TC=100ºC) (A) |
Drain-source On Resistance1 (mΩ) |
Package |
|
32 |
1200 |
32 |
23 |
80 |
SOT-227 |
|
|
40 |
1200 |
41 |
34 |
80 |
TO-247 |
|
|
40 |
1200 |
41 |
34 |
80 |
D3PAK |
1. @ TJ = 25 ºC, VGS = 20V, ID = 20A
The new MOSFETs are ideally suited for PFC and other boost converters, buck converters, two switch forward (asymmetrical bridge) converters, single switch forward converters, flyback converters, inverters, and other high-voltage industrial applications.
To find more information, or to purchase these products today online, please visit the APT40SM120J, APT40SM120B and APT40SM120S webpages. The devices are also available by calling 1-800-737-6937.
