We use cookies to provide you with a better experience. By continuing to browse the site you are agreeing to our use of cookies in accordance with our Privacy Policy.
The U.S. Air Force Research Laboratory and the Office of the Secretary of Defense have awarded Raytheon Co. a $14.9 million contract to further enhance its process for producing gallium nitride-based semiconductors. The new agreement aims to increase the performance, yield and reliability of Raytheon GaN-based, wideband, monolithic, microwave-integrated circuits and circulator components.
Hittite Microwave Corp. announced that it has entered into a definitive agreement to buy substantially all the assets of the Keragis Corp., a provider of extremely high power, wideband amplifier modules, located in San Diego, CA. The purchase price was not disclosed.
Raytheon Co. announced today that under the DARPA Microsystems Technology Office (MTO) Wide Bandgap Semiconductor Program, the company has systematically matured Gallium Nitride (GaN) from basic material to transistors, Monolithic Microwave Integrated Circuits (MMICs), Transmit/Receive (T/R) Modules and finally Transmit/Receive Integrated Multichannel Modules (TRIMMs), enabling game changing system performance for the DoD.
TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, is releasing new phase shifters, high-power limiters and gallium nitride (GaN) MMIC amplifiers that can improve system performance, increase efficiency and reduce part counts in wide-ranging defense and commercial applications.
RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, unveiled its first power doubler amplifier in a multi-chip module to support the requirements of the new data over cable service interface specification (DOCSIS) 3.1.
Cree has released two GaN HEMTs ideal for use in 1.2 to 1.4 GHz L-Band radar amplifier systems: the 250 W CGHV14250 and the 500 W CGHV14500. Tthe new transistors are designed to enhance the performance of band-specific applications ranging from UHF to 1800 MHz.
TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, announced 15 new gallium nitride (GaN) amplifiers and transistors along with two new GaN processes. These products offer performance, size and durability advantages for communications, radar and defense RF systems. TriQuint innovation will be displayed at the IEEE IMS / MTT-S convention and exhibition in Seattle, Washington, June 4-6, Booth 530.
Javelin Semiconductor Inc., one of the first companies to bring standard silicon designs to mobile-phone amplifiers, has been acquired by Avago Technologies Ltd. (AVGO).
Auriga Microwave announced that Dr. Nick Kingsley will host the "Gallium Nitride: Ready for Radar Primetime" workshop at the 6th annual Military Radar Summit. The workshop, to be held on Monday, February 25, at the Ronald Reagan Building in Washington, DC, is part of the three-day summit event that gathers academics and government and industry executives to discuss the latest military radar developments.
The U.S. Air Force Research Laboratory and the Office of the Secretary of Defense have awarded Raytheon Co. a $14.9 million contract to further enhance its process for producing gallium nitride-based semiconductors. The new agreement aims to increase the performance, yield and reliability of Raytheon GaN-based, wideband, monolithic, microwave-integrated circuits and circulator components.
Cree has released two GaN HEMTs ideal for use in 1.2 to 1.4 GHz L-Band radar amplifier systems: the 250 W CGHV14250 and the 500 W CGHV14500. Tthe new transistors are designed to enhance the performance of band-specific applications ranging from UHF to 1800 MHz.