Items Tagged with 'carbide'

WIN Semiconductors Corp., the world’s largest pure-play compound semiconductor foundry,announced the expansion of its GaN technology portfolio with addition of the NP45 gallium nitride on silicon carbide process. NP45 is a 0.45μm-gate MMIC technology enabling users to design fully integrated amplifier products as well as custom discrete transistors, and has been optimized for use in 4G macro-cell base station power amplifiers operating at 2.7 GHz and above where bandwidth and linearity performance are key differentiators.

 Cree, Inc. has made seven new GaN HEMT die available through distribution via Mouser. Manufactured on silicon carbide (SiC) substrates using a either 0.4 or 0.25 μm gate length fabrication process, the gallium nitride (GaN) high electron mobility transistor (HEMT) die exhibit superior performance properties compared to silicon (Si) or gallium arsenide (GaAs) die, including: higher breakdown voltage, higher saturated electron drift velocity, higher thermal conductivity, and higher efficiency. 

Richardson RFPD Inc. announces its attendance and participation at the 2014 Applied Power Electronics Conference and Exposition (APEC). APEC focuses on the practical and applied aspects of the power electronics business, and it draws attendance from all facets of the industry, from manufacturers, designers and suppliers, to individuals involved in marketing and sales.

Richardson RFPD Inc. announces its attendance and participation at the 2013 Applied Power Electronics Conference and Exposition (APEC). APEC focuses on the practical and applied aspects of the power electronics business, and it draws attendance from all facets of the industry, from manufacturers, designers and suppliers, to individuals involved in marketing and sales.

Richardson RFPD Inc. announced the launch of a new website resource focused exclusively on Silicon carbide technology for energy and power applications.

Richardson RFPD Inc. announced it has completed an agreement to distribute Silicon Carbide power products from Cree Inc. Under the agreement, Richardson RFPD will distribute Cree's SiC Schotty diodes, MOSFETs and power modules worldwide.