Wolfspeed, a Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), is exhibiting at European Microwave Week (EuMW) 2015, which will take place September 6–11, 2015 in Paris.
Richardson RFPD Inc. announces that it is taking advance orders and offering full design support capabilities for a new family of 48 V gallium nitride-on-silicon (GaN-on-Si) RF power transistors from Nitronex.
Cree has released two GaN HEMTs ideal for use in 1.2 to 1.4 GHz L-Band radar amplifier systems: the 250 W CGHV14250 and the 500 W CGHV14500. Tthe new transistors are designed to enhance the performance of band-specific applications ranging from UHF to 1800 MHz.