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S.F. Ooi, S. Gao, A. Sambell, D. Smith and P. Butterworth, University of Northumbria

Articles

ARTICLES

A High Efficiency Class-F Power Amplifier Design Technique

In this article, a medium power pseudomorphic HEMT device is used in the design of a high efficiency class-F power amplifier (PA) operating at 900 MHz. The purpose of this article is to describe the design procedure of a class-F PA with a very low drai...
November 14, 2004
S.F. Ooi, S. Gao, A. Sambell, D. Smith and P. Butterworth, University of Northumbria
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High efficiency microwave amplifiers with low supply voltages are required for mobile telecommunications services, such as GSM or DCS1800 systems. Theoretically, class-F power amplifiers (PA) can achieve 100 percent drain efficiency by maximally flattening the voltage and current waveforms of the active device. 1 By increasing the efficiency of...
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