Articles by RFMD

Available in hard copy and CD, the Designer’s Handbook showcases RFMD’s broad product portfolio of RF systems and solutions for applications that drive mobile communications.

RFMD’s newest power integrated circuit (PowerIC) broadband power amplifier (PA), operates over a very wide range of microwave frequencies, making it ideal for multiple band and broadband applications.

RFMD’s family of gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) low-noise amplifiers (LNAs), the RF386X, offer capabilities from 700 to 3800 MHz and provide the best-in-class combination of low noise and high linearity performance, as compared to competing solutions.

RFMD introduces the RF393X family of 48V gallium nitride (GaN) power transistors. Offering enhanced performance from 10W to 120W and very wide tunable bandwidth, this portfolio of 48V GaN transistors demonstrates the superior combination of high power and bandwidth offered by RFMD’s GaN technology versus competing GaAs and silicon LDMOS technologies.

The POLARIS 2™ TOTAL RADIO™ module solution is comprised of a cellular transceiver module and a cellular transmit module for handsets operating on the GSM/GPRS and GSM/GPRS/EDGE networks.

RF Micro Devices Inc. (RFMD) announced that RFMD® has production released the RF3932, a 75 W, highly efficient gallium nitride (GaN) RF unmatched power transistor (UPT) that delivers superior performance versus competing GaAs and silicon power technologies. The release of the RF3932 follows the recent release of the 140...

RF Micro Devices Inc. (RFMD) announced that it has production released the RF3932, a 75 W, highly efficient gallium nitride (GaN) RF unmatched power transistor (UPT) that delivers superior performance versus competing GaAs and silicon power technologies. The release of the RF3932 follows the recent release of the 140...

RF Micro Devices (RFMD), a leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced that it has been awarded a $1.5 M R&D contract by the Office of Naval Research (ONR) related to gallium nitride (GaN) microelectronics, including the development of materials,...

RF Micro Devices Inc. (RFMD), a leader in the design and manufacture of high performance radio frequency components and compound semiconductor technologies, announced availability of the RFPD2650, a new gallium nitride-based hybrid power doubler amplifier that delivers industry-best low distortion performance with the flexibility to optimize for supply current...

RF Micro Devices Inc. (RFMD) announced that Samsung has selected three highly integrated RFMD® components to deliver superior WiFi connectivity in the recently-introduced GALAXY Tab™ Android tablet. Specifically, RFMD is supplying Samsung with the RF5521 front end module (FEM) for the low-band 2.4 GHz frequency, and the RF5515 low...