Articles by RFMD

RF Micro Devices Inc. announced the release of four high-performance front end modules (FEMs) for next generation WiFi applications. The RFMD® RFFM8200, RFFM8500, RFFM8202, and RFFM8502 are highly integrated FEM solutions covering multiple WiFi standards and frequency bands, particularly IEEE802.11n and the emerging 802.11ac specification. RFMD's FEMs achieve industry-leading linear power and dynamic error vector magnitude (EVM) performance in support of the newest reference designs from the world's leading WiFi chipset providers.

RFMD’s new RFVA0016 is an integrated, analog-controlled, variable gain amplifier (VGA) for broadband applications with external matching, allowing operation in all bands from 400 to 2700 MHz with a single module. It features exceptional linearity, OIP3 > 40 dBm, and provides a >30 dB gain control range.

RFMD’s new RFPA1012 GaAs HBT linear power amplifier is specifically designed for wireless infrastructure applications. Using a GaAs HBT fabrication process, this high performance single-stage amplifier achieves a high IP3/DC power ratio that operates over a broad frequency range.

RFMD’s new RFHA1006 is a wideband power amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design.

RFMD’s new RFSW6131 is a GaAs pHEMT single-pole three-throw (SP3T) switch designed for use in cellular, 3G, LTE, and other high performance communications systems. It offers a symmetric topology with excellent linearity and power handling capability, while also 3 V and 5 V positive logic compatible.

RFMD’s new RFFM7600 FEM for 2.5 to 2.7 GHz LTE/WiMAX contains a power amplifier with Tx harmonic filtering and Tx/Rx switching. RFFM7600 is provided in a 6 mm x 6 mm laminate package, incorporating surface mounted devices for filtering and matching.

The RF65x9 series of Transmit/Receive Modules integrate a complete solution in a single front-end module (FEM) for AMI/AMR and smart grid solutions. The FEMs integrate a PA, transmit (Tx) filtering, input and output switches, a Tx or receive (Rx) attenuation path, and an LNA with bypass mode.

The RFSW6131 is a GaAs pHEMT Single-Pole Three-Throw (SP3T) switch designed for use in Cellular, 3 G, LTE, and other high performance communications systems. It offers a symmetric topology with excellent linearity and power handling capability. The RFSW6131 is 3 V and 5 V positive logic compatible.

RFMD adds four new high linearity, low noise I/Q converters for 17 to 27 GHz applications. The two upconverters incorporate an integrated frequency multiplier (x2), LO buffer amplifier, a balanced single sideband (image rejection) mixer followed by variable gain amplifier, and DC-decoupling capacitors. The two downconverters incorporate an image rejection mixer, LO buffer amplifier, and integrated LNA. Each device is packaged in a 5 x 5mm QFN to simplify both system-level board design and volume assembly.

RFMD’s new Multi-Path Antenna Switch Modules offer very low insertion loss with excellent linearity performance. Each is ideal for multi-mode GSM, EDGE, UMTS, and LTE handset applications. These modules integrate low pass filtering on the GSM transmit paths, thus avoiding the need for external harmonic attenuation.