RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance semiconductor components, introduced the RF6460, RFMD's most highly integrated and scalable 3G/4G cellular front end platform. The RF6460 front end platform features an ultra-compact "converged" multi-band, multimode architecture (2G/2.5G/3G/4G)
RFMD’s RF3232, RF3233, and RF3234 quad-band transmit modules are ideal for the final portion of the transmitter section in multi-mode 3G entry handsets and connected devices. These modules are the core of RFMD’s RF323x Power Platform and include 50Ω matched input and output ports, eliminating the need for external PA-to-antenna switch module matching components.
RFMD’s RF5755 front end module delivers a complete integrated solution for handset/handheld WLAN 802.11b/g/n and Bluetooth® systems. The module also features integrated matching circuitry with output harmonic attenuation, reducing BOM and manufacturing costs.
RFMD’s RF3826 is a wideband power amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two-way radios and general purpose amplification. The RF3826 is an input matched GaN transistor packaged in an air cavity ceramic package.
RF Micro Devices introduced three new products – the RF7170, RF7171, and RF7172, expanding RFMD's industry-leading family of dual- and quad-band GSM/GPRS transmit modules. The RF71xx family of transmit modules is the industry's highest volume GSM/GPRS transmit module product family.
RFMD® Announces Major Gallium Nitride (GaN) Milestones. RFMD Qualifies and Releases First GaN Device. Shipments of RF3931 Unmatched Power Transistors Commence to Multiple High Power Amplifier (HPA) Manufacturers.
The RF3021 is a reflective single-pole double throw (SPDT) switch designed for general purpose switching applications which require low insertion loss and high power handling capability. Ideally suited for battery operated applications requiring low insertion loss and switching with very low DC power consumption.
The RF5602 is a linear power amplifier IC designed specifically for medium power applications. The device is manufactured on an advanced InGaP Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 802.11b/g/n access point transmitters.
The ML5830 is a single chip fully integrated Amplitude Shift Keyed (ASK) and Frequency Shift Keyed (FSK) transmitter developed for a variety of applications operating in the 5.790GHz to 5.840GHz band. The ML5830 ASK modulator is designed for symbol rates of 512ksps, 1024ksps, and 2048ksps.
The SPA-1426Z and SPA-1526Z InGaP PAs address base station applications across all cellular standards and frequencies. Operated as Class A PAs, these devices have unmatched performance where backed off linearity is crucial to HPA performance.