Home » Authors » Xiuping Li, Beijing University of Posts and Telecommunications, Beijing, P.R. China; Jianjun Gao, East China Normal University, Shanghai, P.R. China;

Xiuping Li, Beijing University of Posts and Telecommunications, Beijing, P.R. China; Jianjun Gao, East China Normal University, Shanghai, P.R. China;

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Relationships Between Common Emitter, Common Base and Common Collector HBTs

Analytical expressions for the relationships between common emitter, common base and common collector HBTs are presented in this article. Further simplified expressions for noise parameters in the low frequency range are given. This technique is based ...

February 1, 2009

Xiuping Li, Beijing University of Posts and Telecommunications, Beijing, P.R. China; Jianjun Gao, East China Normal University, Shanghai, P.R. China;

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InP-based heterojunction bipolar transistors (HBT) have shown excellent microwave and noise performance and are very attractive for millimeter-wave and optoelectronic applications, such as low noise amplifiers (LNA), mixers, oscillators and other RF sub-system components. HBTs are almost exclusively operated in a common emitter configuration (CE) in amplifier design. However,...