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Keysight Technologies announced that the company's 3D planar EM simulator, Momentum, has been certified for GlobalFoundries' 22 nm fully-depleted silicon-on-insulator (FD-SOI) technology, 22FDX®.
BAE Systems has signed a cooperative agreement with the Air Force Research Laboratory (AFRL) for the first phase of a technical effort to transition GaN semiconductor technology developed by the U.S. Air Force to BAE System's Advanced Microwave Products (AMP) center.
Kaga Electronics Co. Ltd. and Fujitsu Semiconductor Ltd. (FSL) announced that they have entered into a definitive agreement whereby Kaga Electronics acquires 70 percent shares in Fujitsu Electronics Inc. (FEI) from FSL.
EpiGaN will exhibit and highlight its latest GaN epiwafer developments tailored to 5G applications at the Semicon Taiwan show in Taipeh (September 5-7), and at the European Microwave Week (EuMW) 2018 in Madrid (September 23-28).
Fujitsu Limited and Fujitsu Laboratories Ltd. announced they have developed a crystal structure that both increases current and voltage in GaN HEMTs, effectively tripling the output power of transistors used for microwave transmitters.
Specialty foundry TowerJazz (TJ) is ramping a 65 nm version of its RF-SOI process on 300 mm wafers at Fab 7 in Uozu, Japan. To support the ramp, the company has signed a contract with long-term partner, Soitec.
The Strategy Analytics Strategic Component Applications (SCA) group report, “RF GaN Market Update: 2017-2022,” forecasts that RF GaN revenue will push past $1 billion by the end of the forecast timeframe.
Leti and Soitec announced a new collaboration and five-year partnership agreement to drive the R&D of advanced engineered substrates, including SOI and beyond.
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