Semiconductors / Integrated Circuits - Page 186

RFMD(R) Opens New Customer Support Center in Shanghai

December 12, 2006

Fourth Location in Greater China Positions RFMD to Increase Share in Growing Market

Microwave Noise Modeling for AlGaAs/InGaAs/GaAs PHEMTs

Analytical expressions for the noise parameters of microwave pseudomorphic high electron mobility transistors (PHEMT) are presented in this article. These expressions are derived from an accurate small-signal and noise equivalent circuit model, which t...

December 12, 2006

Xiuping Li, Beijing University of Posts and Telecommunications, China, Jianjun Gao, Southeast University, Nanjing, China, Georg Boeck, Technische Univ

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Pseudomorphic high electron mobility transistors (PHEMT) have shown excellent microwave and noise performance and are very attractive for millimeter-wave and optoelectronic applications. The complete characterization of these devices, in terms of noise and scattering parameters, is necessary for computer-aided design (CAD) of monolithic microwave integrated circuits (MMIC) or optoelectronic...

Majority of RFMD's Bluetooth(R) Assets to Be Acquired by QUALCOMM

December 3, 2006

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RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced it has signed anagreement to sell the majority of its Bluetooth(R) assets to QUALCOMM (NASDAQ: QCOM) for $39 million.

Majority of RFMD's Bluetooth(R) Assets to Be Acquired by QUALCOMM

December 3, 2006

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RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced it has signed anagreement to sell the majority of its Bluetooth(R) assets to QUALCOMM (NASDAQ: QCOM) for $39 million.

Majority of RFMD's Bluetooth(R) Assets to Be Acquired by QUALCOMM

December 3, 2006

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RF Micro Devices, Inc. (NASDAQ: RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced it has signed an agreement to sell the majority of its Bluetooth(R) assets to QUALCOMM (NASDAQ: QCOM) for $39 million.

RFMD® Named 'Best Supplier' by Leading Handset Manufacturer

November 28, 2006

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Lenovo Mobile Honors RFMD for Second Consecutive Year

RFMD® Provides Bluetooth® Solution to Leading Handset Baseband Supplier

November 28, 2006

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Reference Platform to Support Design Wins for MediaTek, Inc. and RFMD

RFMD TAPS LOCAL NATIVE TO ENHANCE PUBLIC RELATIONS EFFORTS

November 28, 2006

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RF Micro Devices, Inc. (NASDAQ:RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced the hiring of Brian K. Cockman as Public Relations Specialist. Cockman brings a wealth of public relations and extensive marketing experience with him from the public and nonprofit sectors, along with a wide-ranging skill set in strategic branding.