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ANADIGICS Inc. announced that its AWT6224, AWT6321 and AWT6222 3G dual-band power amplifier (PA) modules are being used in LG Electronics’ new ARENA (KM900) multimedia, touch screen handsets for the European, Asian and Central/South American markets. The LG KM900 ARENA offers a 3-inch, 262K color touchscreen display. It provides...
RF Micro Devices Inc. (RFMD) announced it has entered into a cooperative agreement with the US Department of Energy's National Renewable Energy Laboratory (NREL) to develop a commercially viable and high volume-capable compound semiconductor-based process for high performance photovoltaic (PV) cells. Under the terms of a Cooperative Research and...
Comtech Telecommunications Corp. announced that its Santa Clara, California-based subsidiary, Comtech Xicom Technology Inc. , has received an order for $1.3 M in high power traveling wave tube amplifier (TWTA) equipment for satellite communications. The TWTAs will support uplink transmission for direct-to-home (DTH) high speed Internet access over satellite....
A 10W GaN device from Cree achieved 81%record efficiencies using an active harmonic load-pull system. De-embedding the package and extrinsic device parasitics from measured waveforms allowed designers to establish the exact waveforms for optimum performance.
L-3 Communications announced that its MPRI division has been awarded a follow-on contract by the US Air Forces Europe (USAFE). This five-year IDIQ contract consists of a base year plus four option years, with a total contract potential of $375 M. Under this contract, L-3 will provide the USAFE...
Hittite Adds Wideband Direct Modulators for 3G and 4G
Hittite Microwave Corp. has introduced two new Wideband Direct I/Q Modulators that are ideal for automotive, broadband, cellular/3G, WiMAX/4G, military and test & measurement equipment applications between 20 and 4000 MHz.
At last year’s IMS in Atlanta, both TriQuint and Cree rolled out competing GaN foundry services amid strong interest in the high-power RF technology. This year, RFMD took the stage to introduce their own GaN foundry services, which they did in a press conference hosted by Robert Van Buskirk, President of the company’s Multi-Market Products Group. As reported in this month’s cover story, “The New Power Brokers”, interest in GaN devices is being fueled by the high power density and high-temperature operation of these transistors.
Tahoe RF Semiconductor Inc. announced that it has received an STTR Phase I award from the US Navy for the development of Novel Phase Shifterless RF Phase Array Antenna Systems (N09-T035). The STTR Program provides up to $850,000 in early-stage R&D funding directly to small companies working cooperatively with...
RF Micro Devices Inc. (RFMD), a leader in the design and manufacture of high performance semiconductor components, announced the company has formed a gallium nitride (GaN) Foundry Services business unit to supply high reliability, high performance and price-competitive GaN semiconductor technology into multiple RF power markets. The RFMD GaN...
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