Amplifiers

RSS

AR RF/Microwave Instrumentation has introduced three new antenna mounting adaptors that are uniquely designed to allow horizontal and vertical polarization changes during testing without removing the antenna from the tripod. The three new adaptors are designed to be compatible with existing AR antenna models. •Adaptor Model AM1000 is designed...

--> Arrivederci Roma – European Microwave Week 2009 Wrap-up European Microwave Week 2009 Photo Gallery The Latest EuMW News (See all EuMW News) EuMW Welcome Reception – a Taste of Rome Accel-RF Announces New High Power RF Automated Accelerated Reliability Test System Agilent Introduces High Performance Signal Analyser CST...

European Microwave Week 2009 has said Arrivederci Roma after the event was staged in the Eternal City for the very first time. From 28 September to 2 October all roads led to Nuova Fiera di Roma, which was home to the Week’s four conferences — the 39th European Microwave...

WiFi/WiMAX Power Dividers BroadWave Technologies has expanded its WiFi/WiMAX power divider offering to include four-, six- and eight-way configurations. Model series 151-215-XXX are 50 Ohm, DC to 6 GHz, 1 W units with SMA female connectors. Insertion loss is 1 dB nominal for the four-way configuration across the DC...

Amplifiers, Oscillators and Government Electronics Download the Puzzler Download the Puzzler (PDF) Across 2 The frequency interval from 1 to 2 GHz (hyphenated) 4 802.16e (2 words) 8 The matching of the modulation, coding and other signal and protocol parameters to the conditions on the radio link (2 words)...

RF Micro Devices Inc. (RFMD), a leader in the design and manufacture of high-performance semiconductor components, announced that it has successfully demonstrated industry-leading reliability performance with its high-power Gallium Nitride (GaN) process technology. RFMD's GaN technology demonstrated MTTF = 30 million hours at a channel temperature of 200 degrees...

Tower Semiconductor Ltd. and its US subsidiary, Jazz Semiconductor , announced the availability of its proprietary Deep-Silicon-Via™ (DSV) technology available in its 0.18-micron SiGe BiCMOS (SBC18). The new offering provides a simpler, more innovative way to create a low-inductance ground required to reduce power consumption of power amplifiers (PA)....