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WORKSHOPS & COURSES Microwave Antenna Measurements Short Course * Topics: Design, use and evaluation of anechoic chambers, far-field, near-field and compact ranges, techniques for the determination of antenna radiation patterns, directivity, gain, polarization and impedance, phased array testing and alignment, radar cross-section measurements, and radar imaging techniques. * Site:...

PRODUCT FEATURE Cost-effective Solutions for High Density Interconnect and RF Modules Using Low Temperature Cofired Ceramic Materials DuPont Microcircuit Materials Research Triangle Park, NC C urrently, the most significant driver for packaging and high density interconnects is wireless communications. Figure 1 illustrates the projected regional growth of wireless subscribers...

PRODUCT FEATURE High Linearity SSPAs for 2.3 to 2.7 GHz Applications Stealth Microwave, a division of SSB Technologies Inc. Trenton, NJ T he demand for high speed data transmission is on the rise. Thanks to the Worldwide Web, data transmission has become the fastest growing segment of the telecommunications...

PRODUCT FEATURE A 10 MHz to 46 GHz Microwave Spectrum Analyzer for Testing Wireless Backbone Links IFR Systems Inc. Wichita, KS T he growth of the wireless market at higher frequency bands means that approximately half of all radio links manufactured are above 30 GHz. The 38 GHz band...

TECHNICAL FEATURE Enhancement/Depletion Mode InGaP/AlGaAs PHEMT for High Efficiency Power Amplifiers An enhancement/depletion mode InGaP/AlGaAs power pseudomorphic high electron mobility transistor (PHEMT) is demonstrated for various single- and dual-supply high efficiency power amplifiers. This technology utilizes the excellent etch selectivity and surface charge screening properties of InGaP material. At...

TECHNICAL FEATURE A Fully Integrated Dual-frequency Push-push VCO for 5.2 and 5.8 GHz Wireless Applications A fully integrated dual-frequency voltage control oscillator (VCO) for 5.2 and 5.8 GHz wireless local area network (LAN) application, providing not only a high frequency local oscillator (LO) signal to transceiver mixers but also...

TECHNICAL FEATURE A 3 V Small Chip Size GSM HBT Power MMIC with 56 Percent PAE This article describes a three-stage 56 percent power added efficiency (PAE) InGaP/GaAs hetero-junction bipolar transistor (HBT) power MMIC for use in Global System for Mobile Communications (GSM) applications at 900 MHz. An output...

TECHNICAL FEATURE Design of Coplanar Power Amplifiers for Millimeter-wave System Applications Including Thermal Aspects Because of the poor thermal conductivity of GaAs, successful power MMIC amplifier design in coplanar technology requires careful thermal considerations. The influences of the active device geometry and mounting conditions have been investigated theoretically and...

TECHNICAL FEATURE A Low Cost, Cavity Stabilized 5.8 GHz Oscillator Realized in LTCC To achieve high stability and low cost, a 5.8 GHz FET oscillator was realized in the low temperature, cofired ceramic (LTCC) medium, with an integral cavity resonator. The oscillator exhibits an average 0.23 MHz/°C drift over...

TECHNICAL FEATURE Metamorphic Transistor Technology for RF Applications C.S. Whelan, P.F. Marsh, W.E. Hoke, S.M. Lardizabal, R. Leoni III, K.C. Hwang and T.E. Kazior Raytheon RF Components Andover, MA T he need for bandwidth, driven primarily by the explosive demand for information transfer and communication services, has necessitated the...