We use cookies to provide you with a better experience. By continuing to browse the site you are agreeing to our use of cookies in accordance with our Privacy Policy.
TECHNICAL FEATURE Enhancement/Depletion Mode InGaP/AlGaAs PHEMT for High Efficiency Power Amplifiers An enhancement/depletion mode InGaP/AlGaAs power pseudomorphic high electron mobility transistor (PHEMT) is demonstrated for various single- and dual-supply high efficiency power amplifiers. This technology utilizes the excellent etch selectivity and surface charge screening properties of InGaP material. At...
