Articles Tagged with ''RFMW''

The MB030512M565028 incorporates advanced, state-of-the-art LDMOS technology to deliver 350 Watts of saturated power from 30 to 512 MHz.

The QPC2511 is a SP3T switch specifically designed for S- and X-Band transmission linear power handling with a frequency range of 2 to 11 GHz. 

The CMX90A003 and CMX90A004 are two-stage, fully matched MMIC power amplifiers for use in 860 to 960 MHz, license-free bands. 

The ASC3086C has an operating band of 2 to 250 MHz with typical specifications of +35 dBm P1dB, 22 dB gain and 2.7 dB noise figure. 

The REMC08G11GE delivers up to 55 dBm of saturated power output over a range of 8 to 11 GHz with 56 dB of gain.

The San-tron portfolio is comprised of field replaceable connectors capable of accepting 0.009”, 0.012” and 0.020” diameter launch pins with 1/2” square, 3/8” square or .625” two-hole flange configurations.

The CMD328 covers 6 to 18 GHz with over 27 dB of gain and 1.25 dB noise figure. 

The ART150FEU, LDMOS power transistor provides 150 W of pulsed or CW RF energy for ISM applications ranging from 1 to 650 MHz. 

The F6513S is an 8-channel, transmit, active beamforming, RFIC designed for application in Ku-Band planar phased array antennas for communications or radar applications.

The QPA1003D operates from 1 to 8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30 percent and large-signal gain of 25 dB.