Articles Tagged with ''RFMW''

The MB1.08.0G404828 incorporates advanced, state-of-the-art, GaN on SiC technology to deliver 10 W of saturated power from 1.0 to 8.0 GHz with a P1dB of 4 W. 

The CLF3H0035-100U is a 100 W, unmatched, broadband, GaN-SiC HEMT transistor usable for both CW and pulsed, general purpose applications in frequency ranges from DC to 3.5 GHz.

The Qorvo QPF4288A features +22 dBm MCS11 HE40 -43 dB dynamic EVM and +27 dBm MC20 VHT20 spectral mask compliance for wireless access points. 

The CMX90G301 is a low-power, 50 Ω cascadable MMIC gain block for 1.4 to 7.1 GHz applications. +1 dB of positive gain-slope across the band eliminates the need for equalization and compensates for increasing system losses with frequency.

The CLF3H0060-30U is a 30 W, unmatched, broadband, GaN-SiC HEMT transistor usable for both CW and pulsed, general purpose applications in frequency ranges from DC to 6.0 GHz.

Under the agreement, RFMW becomes a franchised distributor for worldwide marketing and sales of Menlo Micro products derived from their Ideal Switch™ technology, including RF and general-purpose switches, RF subsystems and power relays. 

The Qorvo QPM2100, GaAs MMIC front-end module, is designed for 2.5 to 4.0 GHz radar and combines a T/R switch, LNA with digital attenuator and PA.

The SiT5156 series oscillators deliver ±0.5 to ±2.5 ppm stability performance and can be factory-programmed to any combination of frequency (from 1 to 60 MHz), voltage and pull range.

The ART35FE, LDMOS power transistor provides 35 W of pulsed or CW RF energy for ISM applications ranging from 1 to 650 MHz

The Qorvo QPL1816, single-ended LNA, balances low noise and distortion to provide an ideal solution for a wide range of broadband amplifiers used in Cable TV applications such as optical receivers and low noise front-ends.