Articles Tagged with ''amplifiers''

Freescale Semiconductor, the global leader in radio frequency (RF) power transistors, announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet the requirements of the U.S. aerospace and defense (A&D) market.

At the 2013 IMS show in Seattle, Nuvotronics unveils its high performance, compact, board level filter and diplexer lineup. With high Q, Nuvotronics’ filters feature 1 to 2 dB lower loss than traditional technology components, while offering tuning-free precision manufacturing.

Cree Inc. reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth.  As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve channel capacity and speed of wireless systems, while simultaneously lowering power consumption of transmission amplifiers.

Custom MMIC, (www.CustomMMIC.com), a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the debut of several new GaAs MMIC amplifiers and mixers in booth #1807 at the International Microwave Symposium in Seattle, WA June 4-6th.

Analog Devices Inc. (ADI) introduced four new RF amplifier gain blocks which ease the design of high dynamic range communications, defense and instrumentation systems.

TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, announced 15 new gallium nitride (GaN) amplifiers and transistors along with two new GaN processes. These products offer performance, size and durability advantages for communications, radar and defense RF systems. TriQuint innovation will be displayed at the IEEE IMS / MTT-S convention and exhibition in Seattle, Washington, June 4-6, Booth 530.

NXP Semiconductors N.V. announced the availability of its ultra-wideband Doherty reference design using the BLF884P and BLF884PS – the industry’s first wideband Doherty power amplifiers capable of broadband operation (470 to 806 MHz). The new 70W DVB-T LDMOS designs bring the high-efficiency gains of Doherty topologies to broadcast transmitters, using NXP’s patent-pending architecture capable of operating over an ultra-wideband spectrum.

Rogers Corp. will highlight several of its high quality printed circuit board (PCB) materialsat the upcoming 2013 IEEE International Microwave Symposium (IMS).  Rogers’ Advanced Circuit Materials representatives will be on hand at exhibition booth #1459. In addition, John Coonrod, Rogers Market Development Engineer, will be presenting “Determining Circuit Material Dielectric Constant from Phase Measurements.” as part of the technical program.

IQE plc announces the launch of gallium nitride based, high electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter semi-insulating silicon carbide (SiC) substrates supplied by the WBG Materials subsidiary of II‐VI Inc. (NASDAQ: IIVI), a global provider of engineering materials and optoelectronic components.

Teseq has expanded its broadband amplifier line to include a Class A linear and low distortion model that operates from 10 kHz to 400 MHz with a rated power level of 260 W.