Articles Tagged with ''power''

Freescale Semiconductor introduces two new Airfast RF power solutions that cover all major cellular infrastructure bands and deliver industry-leading gain in a compact package. 

TriQuint Semiconductor Inc., a leading RF solutions supplier and technology innovator, is releasing new phase shifters, high-power limiters and gallium nitride (GaN) MMIC amplifiers that can improve system performance, increase efficiency and reduce part counts in wide-ranging defense and commercial applications.

RFMD Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced that the newest flagship Android smartphone incorporates its envelope tracking (ET) power amplifiers (PAs), antenna switch module, diversity switches and antenna tuner. This fifth generation smartphone from a leading Korea-based manufacturer is the slimmest and fastest Android phone to date and the first new smartphone to benefit from the improved power efficiency of RFMD's ET power amplifiers and antenna control solutions.

Tektronix Inc., a leading worldwide provider of test, measurement and monitoring instrumentation, announced an expansion of its family of precision power analyzers with the introduction of the PA1000 single-phase power analyzer. Featuring a patent pending Spiral Shunt™ design, the PA1000 provides engineers designing and testing power supplies, consumer electronics and other electrical products with accurate power measurements in the shortest possible time. 

Covering the 2 to 6 GHz frequency band, the PTS6900 is a brand new solid state power amplifier (SSPA) developed by TMD Technologies. Optimised for use in EW/ECM systems, the low band CW module produces a high power output of 150 W and has a 55 dB gain adjustable from 50 to 60 dB.

Vishay Precision Group Inc. announced that its Vishay Foil Resistors brand (VFR) has enhanced its VFCP series of Bulk Metal® Z-Foil ultra-high-precision flip chip resistors with an extended resistance range down to 5 Ω. The devices feature ultra-low TCR of ±0.05 ppm/°C nominal (0°C to +60°C) and ±0.2 ppm/°C typical (-55°C to +125°C, +25°C ref.) and load-life stability of ±0.005% at 70°C for 2,000 hours at rated power and ±0.01% at 70°C for 10,000 hours. 

Hittite Microwave Corp. announced a new Gallium Nitride (GaN) MMIC power amplifier product which offers significant performance, size and durability advantages for communications, test instrumentation and radar systems operating in the 6 to 18 GHz frequency range.

Coilcraft CPS (Critical Products and Services) has announced its new AE425PJB Series of low-profile power inductors that meet NASA low outgassing specifications.

Richardson RFPD Inc. announces the availability of the industry's first 1Ω, 1700V Silicon Carbide (SiC) metal oxide semiconductor (MOSFET) from Cree Inc. (Cree).

Cree Inc. announces that Shinry Technologies, a premier high-tech enterprise focused on energy efficient applications in transportation and lighting, employed Cree’s 1200V C2M family of SiC MOSFETs in its new, high-efficiency, hybrid electric and electric vehicle (HEV/EV) power converters to achieve industry-leading 96 percent efficiency.  According to Shinry Technologies, Cree’s C2M SiC MOSFETS also enabled a 25 percent reduction in product size and reduced peak power losses by over 60 percent compared to the traditional silicon versions.