Articles Tagged with ''rfmd''

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components, announced that RFMD Fellow Kevin W. Kobayashi has been named a Fellow of the Institute of Electrical and Electronics Engineers (IEEE) by the IEEE Board of Directors.

RFMD returns to 2013 International CES with its industry-leading product portfolio and, as members of the ZigBee® Alliance, the company will be exhibiting in the ZigBee® Pavilion, Booth 20618 South Hall 1.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the availability of the RFFM6903 front end module (FEM). RFMD's highly-integrated RFFM6903 FEM meets or exceeds the system requirements for AMI/AMR smart meter applications operating in the 868MHz — 960 MHz frequency band.

RF Micro Devices Inc. announced that RFMD has production released two highly linear gallium nitride (GaN) RF unmatched power transistors (UPTs) —RFHA3942 (35W) and RFHA3944 (65W) — that deliver superior linear performance versus competing GaN transistors.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components, announced a definitive agreement to acquire Amalfi Semiconductor (Amalfi), a leading fabless semiconductor company specializing in cost effective, high performance RF and mixed-signal ICs for the rapidly growing entry-level smartphone market.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the appointment of Alan Hallberg as the company's corporate vice president and chief marketing officer (CMO). In the role of CMO, Hallberg will oversee RFMD's global marketing activities and will be based in RFMD's growing Silicon Valley, CA, location.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, unveiled two new CATV control components, in conjunction with the SCTE Cable-TEC Expo in Orlando, FL. The new components include the RFSA2654, a 75-ohm broadband digital step attenuator, and the RFSW1012, a high power handling single-pole, double-throw switch (SPDT).

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced the company will showcase its portfolio of industry-leading wired broadband components at the SCTE Cable-Tec Expo 2012, to be held October 17-19, 2012, in Orlando, Florida.

RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced that it is enabling Samsung's next-generation GALAXY Note II with RFMD's PowerSmart® Power Platforms — the industry's first and only converged multimode, multiband (MMMB) power amplifiers.

RF Micro Devices Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced it has begun production shipments of its ultra-high efficiency power amplifiers to Samsung in support of the highly anticipated next-generation Galaxy S3 4G LTE smartphone.