We use cookies to provide you with a better experience. By continuing to browse the site you are agreeing to our use of cookies in accordance with our Privacy Policy.
RFMD, a global leader in the design and manufacture of high-performance radio frequency solutions, introduced the world's first 6-inch GaN-on-Silicon Carbide (SiC) wafers for manufacturing RF power transistors for both military and commercial use. The company is converting all GaN production and development to 6-inch diameter wafers using its existing high-volume, 6-inch GaAs foundry to reduce platform cost for the growing GaN device market.
RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, today introduced the RFHA1027, a gallium nitride (GaN) matched power transistor (MPT) that will deliver industry-leading pulse power performance of 500W in a compact flanged package at L-Band.
RFMD will be exhibiting at IMS 2013 at booth 730. Explore the RFMD® industry-leading RF and microwave product portfolio with kiosks featuring solutions for WiFi and smart energy, wireless infrastructure, GaN RF power, and microwave MMICs.
RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, reported financial results for the company's fiscal 2013 fourth quarter, ended March 30, 2013.
RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced the appointment of James A. Clifford as vice president, foundry services, effective April 1, 2013.
RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced a new Gallium Arsenide (GaAs) sourcing strategy intended to increase manufacturing flexibility, expand gross margin, and support aggressive growth.
RF Micro Devices Inc. announced the expansion of the company's entry solutions product portfolio to include multiple new solutions for 2G and 3G entry smartphones. The new RF solutions are designed to solve the increasingly complex RF requirements of entry-level 2G and 3G smartphones related to cost, band count, and thermal dissipation.
RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced the addition of multiple new products to RFMD's industry-leading portfolio of envelope tracking (ET) power management and power amplifier (PA) solutions.
RF Micro Devices Inc. announced the expansion of the company's family of multimode multi-band (MMMB) power amplifiers (PA) to include the highly integrated RF7388 3G/4G MMMB PA.
RF Micro Devices Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, announced the company will present its expanding portfolio of industry-leading radio frequency (RF) components for smartphones, tablets and other data-centric mobile devices at the 2013 Mobile World Congress (MWC 2013).