Richardson RFPD, Inc., an Arrow Electronics company, announced the availability and full design support capabilities for a new RF power, GaN transistor from NXP Semiconductors.
The MMRF5018HSR5 is a 125 W, continuous wave, RF power transistor optimized for wideband operation up to 2700 MHz. It includes input matching for extended bandwidth performance.
Key features include:
- High power density
- Decade bandwidth performance
- Enhanced thermal resistance packaging
- Power gain: 12.0 dB
- Drain efficiency: 64.4 percent (typical)
- High ruggedness: > 20:1 VSWR.
With its wideband capabilities, high gain, ruggedness and drain efficiency, the MMRF5018HSR5 offers a complete solution for multiband communication applications. It is also versatile for a range of CW, pulse and wideband RF applications.