Richardson RFPD, Inc announced the availability and full design support capabilities for several new RF power multi-chip modules (MCMs) and the RapidRF demonstration platform from NXP Semiconductors.

The new MCMs are part of NXP’s 5G Airfast solutions product family that includes LDMOS power amplifier modules, GaAs pre-driver modules and receiver modules for cellular frequency bands from 2.3 GHz to 3.8 GHz, with output power from 3 to 5 W.

The fully integrated power amplifier modules feature advanced high-performance in-package Doherty, fully matched 50-ohm input/output, multiple gain stages and a small footprint. This combination of features is ideal for scaling mMIMO 5G configuration up to 64T64R.

The new power amplifier modules include:

• AFSC5G26E38 (2.6 GHz band, +38 dBm Avg.)
• AFSC5G26E39 (2.6 GHz band, +39 dBm Avg.)*
• AFSC5G26F38 (2.6 GHz band, +38 dBm Avg.)
• A3M35TL039 (3.5 GHz band, +39 dBm Avg.)*
• AFSC5G35E38 (3.5 GHz band, +38 dBm Avg.)
• AFSC5G37E38 (3.7 GHz band, +38 dBm Avg.)
• A3M37TL039 (3.7 GHz band, +39 dBm Avg.)
• AFSC5G40E38 (4.0 GHz band, +38 dBm Avg.)

*Included in a featured RapidRF front-end design

NXP’s RapidRF front-end designs integrate an RF power amplifier module, receiver LNAs, a transmit/receive switch, a circulator and a bias controller in a compact footprint. They are ease-of-use solutions to help accelerate prototyping for massive MIMO systems, Open RAN, outdoor small cells and low-power remote radio heads. The RapidRF platform includes design files.

Featured 28 V LDMOS RapidRF front-end designs include: